Low-distortion RF to IF Mixers
Integrated Device Technology, Inc., the Analog and Digital Company™ delivering essential mixed-signal semiconductor solutions, announced that it has expanded its analog wireless infrastructure portfolio with two low-power, low-distortion radio frequency (RF) to intermediate frequency (IF) mixers for cellular base station equipment. The new devices improve system third-order intermodulation (IM3) performance and reduce power consumption, resulting in improved quality of service (QoS) and enabling smaller enclosures with increased reliability in 4G wireless infrastructure applications.
The IDT F1150 and F1152 are low-power, low-distortion dual 1700 – 2200 MHz RF to IF mixers with ultra linear (+42 dBm) third-order intercept point (IP3O) for superb intermodulation rejection, making them ideal for multi-carrier, multi-mode cellular systems found in 4G wireless base stations. The mixers reduce power consumption by over 40 percent versus standard mixers, significantly reducing heat dissipation and easing heat-sinking requirements on the radio card – a critical factor for today’s densely packed enclosures. In addition, the devices improve IM3 distortion by over 15 dB for better signal-to-noise ratio (SNR), allowing customers to improve performance with a higher front-end gain.
“Our latest RF to IF mixer products affirm our commitment to strengthen our leadership in wireless infrastructure applications and expand our product portfolio into the RF signal chain,” said Tom Sparkman, general manager and vice president of the Communications Division at IDT. “The low power consumption and low IM3 distortion of the IDT F1150 and F1152 address a key need for our customers’ 4G base station solutions, which are being deployed at an intense pace. The high-performance and full-featured characteristics are well-received by our customers who are already using high-performance IDT products, including clocks and timing, RapidIO®, and other devices from our complete communications portfolio.”
The IDT F1150 and F1152 complement the recently announced IDT F1200 low-noise digitally controlled IF variable gain amplifier (VGA) in IDT’s growing portfolio of RF signal path products. These products leverage IDT’s analog expertise and rich digital heritage to provide system-level solutions that optimize customers’ applications.
The IDT F1150 (high-side injection) and F1152 (low-side injection) are currently sampling to qualified customers and are available in a 36-pin 6×6 mm QFN package. For more information, please visit http://www.idt.com/go/RF.