IGBT with Reverse Recovery Diode


IGBT with Reverse Recovery Diode

IGBT with Reverse Recovery Diode

Toshiba Electronics Europe has expanded its family of compact, integrated IGBTs with a high-speed switching device that will simplify the design and reduce the component count in cooking appliances and other induction heating applications.

Optimised for voltage resonance inverter switching, the new 1200V N-channel, ‘enhancement mode’ GT40QR21 comprises an IGBT and a reverse recovery freewheeling diode monolithically integrated into a single, compact device. Maximum current ratings are 40A at 25ºC and 35A at 100ºC and the IGBT can operate with extended junction temperatures of up to 175ºC.

Toshiba’s GT40QR21 is designed for very high speed switching – typical IGBT fall time (tf) and turn-off time (toff) with a collector current of 40A are just 0.2μs and 0.4μs respectively, while typical reverse recovery time (trr) for the freewheeling diode is 0.6μs (IF = 15A). Typical collector-emitter saturation voltage (VCE) is rated at just 1.9V (IC = 40A).

Supplied in a TO-3P(N), TO247-equivalent package the IGBT has dimensions of 15.5mm x 20.0mm x 4.5mm and a maximum junction-to-case thermal resistance (Rth(j-c)) of 0.65ºC/W.


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