90 V N-Channel Power MOSFETS

90 V N-Channel Power MOSFETS

90 V N Channel Power MOSFETS

Vishay Intertechnology, Inc. introduced the first of its new Vishay Siliconix military-grade n-channel power MOSFETs: the JAN-qualified 60 V 2N6660JANTX/JANTXV and 90 V 2N6661JANTX/JANTXV. For military, space, and avionics applications, the devices combine low on-resistance and fast switching speeds in the sealed TO-205AD (TO-39) package.

The Vishay Siliconix facility in Santa Clara, Calif. has been re-qualified by DSCC to manufacture MOSFETs with screening to MIL – PRF – 19500. The MIL – PRF – 19500 specification is a standard that establishes the performance, quality, and reliability requirements for discrete components used in systems being built for military and critical avionic applications.

The devices released today are optimized for TTL/CMOS direct logic level interfaces; drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors; battery operated systems; and solid-state relays. The MOSFETs’ sealed TO-205AD package is designed to withstand the higher temperatures of military and aerospace applications.

The 60 V 2N6660JANTX/JANTXV offers low on-resistance of 1.3 Ω typical at 10 V, a low gate-source threshold voltage of 1.7 V, and fast switching speeds of 8 ns. The 90 V 2N6661JANTX/JANTXV provides low on-resistance of 3.6 Ω typical at 10 V, a low gate-source threshold voltage of 1.6 V, and fast switching speeds of 6 ns. Both devices feature low input and output leakage, and provide low input capacitance of 35 pF typical.

The 2N6660JANTXV and 2N6661JANTXV feature a 100 % internal visual (pre-cap) inspection per MIL- PRF- 19500. Vishay’s additional hi – rel capabilities include Group A, Group B, Group C, and Group E testing, in addition to a lower cost – 2 flow option (MIL- STD – 750 visual and processing).

Samples and production quantities of the JAN-qualified MOSFETs are available now, with lead times of 16 weeks for larger orders.

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