30 V P-Channel Chipscale MOSFETs


30 V P-Channel Chipscale MOSFETs

30 V P Channel Chipscale MOSFETs

Vishay Intertechnology, Inc. expanded its MICRO FOOT® TrenchFET® Gen III power MOSFET family with two p-channel 30 V devices that set new benchmarks for size and on-resistance. The new Si8497DB is the industry’s first 30 V chipscale MOSFET in the compact 1 mm by 1.5 mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30 V chipscale device in the 1.6 mm by 1.6 mm form factor.

Vishay’s TrenchFET Gen III p-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET by up to half. Chipscale MICRO FOOT technology allows the use of a larger die for a given outline, which means a lower on-resistance for a given device area, in addition to space savings to enable smaller, slimmer end products.

The Si8497DB and Si8487DB will be used for load, battery, and charger switching in handheld devices including smart phones, tablets, point-of-sale (POS) devices, and mobile computing. In laptop battery management circuits, the MOSFETs’ low on-resistance translates into lower voltage drops across the load switch, which in turn reduces the occurrence of problem undervoltage lockouts. In charger applications for tablet PCs, smart phones, and POS devices, the low on-resistance means that higher charge currents can be used, facilitating faster battery charging.

For designers, the Si8487DB and Si8497DB provide a choice between size and on-resistance to meet the needs of their specific application. Where space is at a premium, the 1.5 mm x 1 mm Si8497DB combines a slim 0.59 mm maximum height with low on-resistance of 53 mΩ at 4.5 V, 71 mΩ at 2.5 V, and 120 mΩ at 2.0 V. In applications where low on-resistance is essential, the Si8487DB offers on-resistance of 31 mΩ at 10 V, 35 mΩ at 4.5 V, and 45 mΩ at 2.5 V, and a 0.6 mm maximum height, the industry’s lowest on-resistance values for such a p-channel power MOSFET.

The devices are halogen-free in accordance with the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. The Si8487DB is pin compatible with Vishay’s 30 V Si8409DB.

Samples and production quantities of the new Si8487DB and Si8497DB TrenchFET power MOSFET are available now, with lead times of 12 weeks for larger orders.


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